SK Hynix - DDR4 - module - 32 GB - DIMM 288-pin - 3200 MHz / PC4-25600 - CL22 - 1.2 V - registered - ECC
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Stable and efficient performance
With a memory speed of 3200 MHz, this DDR4 SDRAM offers stable performance suited for high-end applications. The effective speed ensures that the system runs smoothly, whether multitasking or running resource-intensive software.
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Advanced data integrity
The inclusion of ECC (Error-Correcting Code) technology helps in detecting and correcting internal data corruption. This feature is essential for maintaining data accuracy, especially in servers and workstations requiring reliable data transmission.
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Dual rank configuration
The dual rank organization enhances memory access speed and overall performance when multiple memory modules are used in tandem. This effectively boosts system responsiveness during demanding tasks.
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Energy-efficient operation
Operating at a supply voltage of only 1.2 V, this memory module is designed for energy efficiency, reducing overall power consumption while delivering optimal performance for modern computing systems.
The 32 GB DDR4 SDRAM memory module from SK Hynix is designed to enhance system performance efficiently. With a memory speed of 3200 MHz, this DRAM ensures fast and reliable data processing, making it ideal for demanding applications. The module features ECC Data Integrity Check, enhancing stability and reducing chances of data corruption, while the dual rank configuration allows for improved performance in multi-core scenarios. Packaged in a 288-pin DIMM form factor, this registered memory module operates at a supply voltage of 1.2 V, balancing power consumption and performance. It is designed for compatibility with specific systems, catering to various upgrade needs. The memory specification compliance with PC4-25600 and a CAS latency of CL22 ensures smooth and efficient computing.
- Storage capacity of 32 GB
- DDR4 technology for faster performance
- ECC support for enhanced data integrity
- Runs at 3200 MHz memory speed
- Registered memory for improved reliability
